Photoassisted Immersion Deposition of Cu Clusters onto Porous Silicon: A Langmuir-Hill Ligand-Locus Model Applied to the Growth Kinetics

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datacite.alternateIdentifier.citationJOURNAL OF PHYSICAL CHEMISTRY C,Vol.118,14905-14912,2014
datacite.alternateIdentifier.doi10.1021/jp502108b
datacite.creatorRecio Sánchez, Gonzalo
datacite.creatorGallach, Dario
datacite.creatorManso Silvan, Miguel
datacite.creatorFukami, Kazuhiro
datacite.creatorMartin Palma, Raul Jose
datacite.creatorRafael Castro, German
datacite.creatorMunoz Noval, Alvaro
datacite.date2014
datacite.titlePhotoassisted Immersion Deposition of Cu Clusters onto Porous Silicon: A Langmuir-Hill Ligand-Locus Model Applied to the Growth Kinetics
dc.date.accessioned2021-04-30T17:05:04Z
dc.date.available2021-04-30T17:05:04Z
dc.description.abstractCu-porous silicon (Cu-PS) composite materials consisting of nanosized Cu dusters preferentially grown on the surface of PS were fabricated by photoassisted deposition of Cu nanoparticles onto PS. Structural and chemical characterization of the Cu particles grown in the PS matrix has been carried out by synchrotron X-ray absorption spectroscopy, from which different reaction stages have been identified within the photoassisted reaction. In particular, it was found that the reduction of Cu occurs in three main phases: (a) Cu nucleates homogeneously in a few seconds over the surface of PS by a coupled red-ox reaction; (b) clusters grow by new reduced ions, which tend to oxidize the previously deposited Cu atoms making increasingly heterogeneous Cu clusters; and (c) a competitive process between nucleation of new dusters and cluster coalescence gives rise to a bulklike Cu thin film. It was determined that the structures formed in the first two phases display surface plasmon resonance, with band intensity and broadening consistent with the increasing heterogeneity of the clusters. The growth kinetics has been fitted to a Langmuir-Hill model. Following these results, a reaction model has been proposed to explain the mechanisms involved in the first stages of Cu dustering.
dc.identifier.urihttp://repositoriodigital.uct.cl/handle/10925/3929
dc.language.isoen
dc.publisherAMER CHEMICAL SOC
dc.sourceJOURNAL OF PHYSICAL CHEMISTRY C
oaire.resourceTypeArticle
uct.catalogadorWOS
uct.indizacionSCI
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