Evaluation of the surface activity of silicon in electrolytic media under the influence of hydroxyl radicals

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datacite.alternateIdentifier.citationJournal of Electroanalytical Chemistry, 982, 2025
datacite.alternateIdentifier.doi10.1016/j.jelechem.2025.119010
datacite.alternateIdentifier.issn1572-6657
datacite.creatorHeyser, Cristopher A.
datacite.creatorRamírez, A. M.R.
datacite.creatorGrez, Paula M.
datacite.creatorMuñoz, Eduardo Carlo
datacite.creatorSáez-Arteaga, Alberto
datacite.creatorBriones, Nicole
datacite.creatorHäberle, Patricio
datacite.date2025
datacite.rightsRegistro bibliográfico
datacite.subjectCristalline Silicon Type-n
datacite.subjectHydroxyl Radical
datacite.subjectSurface Activity
datacite.subjectVoltammetry Study
datacite.subjectActivation Analysis
datacite.subjectAnodic Oxidation
datacite.subjectCarbonization
datacite.subjectCarrier Concentration
datacite.subjectChemical Activation
datacite.subjectCracking (chemical)
datacite.subjectDechlorination
datacite.subjectElectrolysis
datacite.subjectFree Radical Reactions
datacite.subjectPhotodissociation
datacite.subjectPhotolysis
datacite.subjectRedox Reactions
datacite.subjectCristalline Silicon Type-n
datacite.subjectCurrent Flowing
datacite.subjectElectrical Current
datacite.subjectElectrolytic Medium
datacite.subjectExperimental Conditions
datacite.subjectHydroxyl Radicals
datacite.subjectRedox Process
datacite.subjectSurface Activities
datacite.subjectVoltammetric Profiles
datacite.subjectVoltammetry Study
datacite.subjectAscorbic Acid
datacite.titleEvaluation of the surface activity of silicon in electrolytic media under the influence of hydroxyl radicals
dc.date.accessioned2025-10-06T14:21:57Z
dc.date.available2025-10-06T14:21:57Z
dc.description.abstractThe purpose of this study is to evaluate the surface activity of silicon by evaluating a voltammetric profile of the substrate in an electrolytic medium. Since the electrical current flowing through the circuit is a measure of the rate at which a redox process occurs at the interface, higher current values will indicate more active substrates. For this study, hydroxyl radicals were generated by photochemical decomposition of H<inf>2</inf>O<inf>2</inf>. For this purpose, a H<inf>2</inf>O<inf>2</inf> solution was irradiated with a UV lamp. The experimental conditions that were varied in the process were: illumination time, H<inf>2</inf>O<inf>2</inf> concentration. The presence of the hydroxyl radicals generated through the methodology employed was qualitatively confirmed by fluorescence, using for this purpose (i) a 2?,7?-dichlorodihydrofluorescein diacetate (DCFH-DA) probe and (ii) a radical scavenger , which corresponds to an antioxidant species, in this case ascorbic acid. On the other hand, for the voltammetric measurements of the semiconducting substrate after interaction with hydroxyl radicals, a 0,1 M KCl solution was used as electrolyte solution. The experimental conditions studied were: influence of the pH of the medium and influence of different chemical treatments applied to the substrates used after interaction with hydroxyl radicals. From the results obtained, an increase in both<inf>H2O2</inf> concentration and immersion time produces an increase in current in the interphase electrode processes, indicating an activation of the semiconductor electrode surface. Indeed, in the anodic hemicycle, the signal of substrate oxidation appears at ?0,75 V, and then from ?0,45 V onwards, the oxidation of water. This is an indication that the semiconductor/electrolyte interface is ohmic, since in the absence of illumination (absence of minority carriers, h+) there are oxidation processes. On the other hand, for pH values in the intervals between 2 > pH > 5 and 7 > pH > 13, the slopes are approximately 0 mV/pH and for the interval between 5 > pH > 7, of the order of 60 mV/pH, this being an indication of a change in the nature of the surface functional groups of silicon. © 2025 Elsevier B.V., All rights reserved.
dc.description.ia_keywordhydroxyl, radicals, surface, were, purpose, silicon, substrate
dc.identifier.urihttps://repositoriodigital.uct.cl/handle/10925/6877
dc.language.isoen
dc.publisherElsevier BV
dc.relationinstname: ANID
dc.relationreponame: Repositorio Digital RI2.0
dc.rights.driverinfo:eu-repo/semantics/openAccess
dc.sourceJournal of Electroanalytical Chemistry
dc.subject.ia_odsODS 6: Agua limpia y saneamiento
dc.subject.ia_oecd1nIngeniería y Tecnología
dc.subject.ia_oecd2nIngeniería Eléctrica, Electrónica e Informática
dc.subject.ia_oecd3nIngeniería Eléctrica y Electrónica
dc.type.driverinfo:eu-repo/semantics/article
dc.type.driverhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.type.openaireinfo:eu-repo/semantics/publishedVersion
dspace.entity.typePublication
oaire.citationEdition2025
oaire.citationTitleJournal of Electroanalytical Chemistry
oaire.citationVolume982
oaire.fundingReferenceUFRO DIUFRO DI23-0069
oaire.fundingReferenceANID FONDECYT 1230426
oaire.licenseConditionCopyright © Elsevier B.V., 2025
oaire.resourceTypeArtículo
oaire.resourceType.enArticle
uct.catalogadorjvu
uct.comunidadRecursos Naturalesen_US
uct.departamentoDepartamento de Ciencias Agropecuarias y Acuícolas
uct.facultadFacultad de Recursos Naturales
uct.indizacionScience Citation Index Expanded - SCIE
uct.indizacionScopus
uct.indizacionChemical Abstracts Service (CAS)
uct.indizacionINSPEC
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